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                                                                                    MSC81325M
                                                RF & MICROWAVE TRANSISTORS
                                                       AVIONICS APPLICATIONS

.
.   REFRACTORY/GOLD METALLIZATION
                                                                                            PRELIMINARY DATA



.
.
    EMITTER BALLASTED
    RUGGEDIZED VSWR :1

.
.
    INPUT/OUTPUT MATCHING
    OVERLAY GEOMETRY

.   METAL/CERAMIC HERMETIC PACKAGE
    POUT = 325 W MIN. WITH 6.7 dB GAIN                                 .400 x .400 2NLFL (S042)
                                                                           hermetically sealed
                                                                ORDER CODE                      BRANDING
                                                                 MSC81325M                       81325M




                                                                        PIN CONNECTION

DESCRIPTION
The MSC81325M device is a high power pulsed
transistor specifically designed for DME/TACAN
avionics applications.
This device is capable of withstanding an infinite
load VSWR at any phase angle under full rated
conditions. Low RF thermal resistance and semi-
automatic bonding techniques ensure high relia-
bility and product consistency.
The MSC81325M is housed in the industry-stand-                       1. Collector           3. Emitter
ard AMPACTM metal/ceramic hermetic package
                                                                     2. Base                4. Base
with internal input/output matching structures.


ABSOLUTE MAXIMUM RATINGS (T case = 25 

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