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                                                                                    MSC81350M
                                                RF & MICROWAVE TRANSISTORS
                                                       AVIONICS APPLICATIONS

.
.   REFRACTORY/GOLD METALLIZATION

.
.
    RUGGEDIZED VSWR 20:1
    INTERNAL INPUT/OUTPUT MATCHING

.
.
    LOW THERMAL RESISTANCE
    METAL/CERAMIC HERMETIC PACKAGE
    P OUT = 350 W MIN. WITH 7.0 dB GAIN
                                                                       .400 x .400 2NLFL (S042)
                                                                           hermetically sealed
                                                               ORDER CODE                       BRANDING
                                                                MSC81350M                        81350M




                                                                        PIN CONNECTION

DESCRIPTION
The MSC81350M device is a high power pulsed
transistor specifically designed for IFF avionics
applications.
This device is capable of withstanding a minimum
20:1 load VSWR at any phase angle under full
rated conditions. Low RF thermal resistance and
semi automatic wire bonding techniques ensure
high reliability and product consistency.
The MSC81350M is housed in the unique                                1. Collector           3. Emitter
AMPACTM package with internal input/output                           2. Base                4. Base
matching structures.

ABSOLUTE MAXIMUM RATINGS (T case = 25 

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