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sd8250


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                                                                                                                  SD8250
                                                  RF & MICROWAVE TRANSISTORS
                                                         AVIONICS APPLICATIONS

.
.   REFRACTORY/GOLD METALLIZATION

.   EMITTER SITE BALLASTED
    5:1 VSWR CAPABILITY @ 1.75 dB RF

.
.
    OVERDRIVE
    LOW THERMAL RESISTANCE

.
.
    INPUT/OUTPUT MATCHING
    OVERLAY GEOMETRY                                                                   .400 x .400 2LFL (S036)

.   METAL/CERAMIC HERMETIC PACKAGE
    P OUT = 250 W MIN. WITH 8.0 dB GAIN                                     ORDER CODE
                                                                              SD8250
                                                                                           hermetically sealed
                                                                                                                  BRANDING
                                                                                                                   STAN250A




DESCRIPTION                                                                              PIN CONNECTION
The SD8250 is a high power Class C transistor
specifically designed for TACAN/DME pulsed out-
put and driver applications.
This device is designed for operation under mod-
erate pulse width and duty cycle pulse conditions
and is capable of withstanding 5:1 output VSWR
at rated RF overdrive.
Low RF thermal resistance and computerized au-
tomatic wire bonding techniques ensure high re-
liability and product consistency.
The SD8250 is supplied in the AMPACTM Hermetic                                         1. Collector           3. Emitter
Metal/Ceramic package with internal Input/Output                                       2. Base                4. Base
matching structures.

ABSOLUTE MAXIMUM RATINGS (T case = 25 



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