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                                                                            SGSIF461
                                               FAST-SWITCH HOLLOW-EMITTER
                                                           NPN TRANSISTOR
s   VERY HIGH SWITCHING SPEED
s   NPN TRANSISTOR
s   LOW BASE-DRIVE REQUIREMENTS

APPLICATIONS:
s SWITCH MODE POWER SUPPLIES

DESCRIPTION
The     SGSIF461     is    manufactured    using                                    3
                                                                                2
Multiepitaxial Mesa technology for cost-effective
                                                                            1
high performance and uses a Hollow Emitter
structure to enhance switching speeds.
The SGSF series is designed for high speed                     ISOWATT218
switching applications such as power supplies
and horizontal deflection circuits in TVs and
monitors.


                                                       INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                       Parameter                       Value                  Unit
     V CES   Collector-Emitter Voltage (V BE = 0)                 850                    V
     V CEO   Collector-Emitter Voltage (I B = 0)                  400                    V
     VEBO    Emitter-Base Voltage (I C = 0)                        7                     V
      IC     Collector Current                                    15                     A
     I CM    Collector Peak Current (t p < 5 ms)                  25                     A
      IB     Base Current                                          8                     A
     I BM    Base Peak Current (t p < 5 ms)                       15                     A
                                          o
     P tot   Total Dissipation at T c = 25 C                      55                     W
                                                                                        o
     T stg   Storage Temperature                               -65 to 150                   C
                                                                                        o
      Tj     Max. Operating Junction Temperature                  150                       C

June 1997                                                                                       1/4
SGSIF461

THERMAL DATA

                                                                                   ISOWATT218
                                                                                                              o
  R thj-case   Thermal Resistance Junction-Case                              Max          2.2                     C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symbol               Parameter                            Test Conditions        Min.         Typ.   Max.   Unit
      I CES    Collector Cut-off              V CE = 700 V                                             200        

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