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HIGH VOLTAGE FASTSWITCHING NPN
POWER TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s NPN TRANSISTOR
s HIGH VOLTAGE CAPABILITY
s VERY HIGH SWITCHING SPEED
APPLICATIONS:
s SWITCH MODE POWER SUPPLIES
DESCRIPTION 3
The SGSF324 is manufactured using 2
1
Multiepitaxial Mesa technology for cost-effective
high performance and uses a Hollow Emitter
structure to enhance switching speeds. TO-220
The SGSF series is designed for high speed
switching applications such as power supplies
and horizontal deflection circuits in TVs and
monitors.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol Parameter Valu e Un it
V CES Collector-Emitter Voltage (VBE = 0) 1200 V
V CEO Collector-Emitter Voltage (IB = 0) 600 V
VEBO Emitter-Base Voltage (IC = 0) 7 V
IC Collector Current 4 A
I CM Collector Peak Current (tp < 5 ms) 8 A
IB Base Current 3 A
I BM Base Peak Current (tp < 5 ms) 6 A
o
P tot T otal Dissipation at Tc = 25 C 70 W
o
T s tg Storage Temperature -65 to 150 C
o
Tj Max. Operating Junction T emperature 150 C
September 1997 1/6
SGSF324
THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-Case Max 1.78 C/W
o
R t hj- amb Thermal Resistance Junction-Ambient Max 62.5 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CES Collector Cut-off V CE = 1200 V 200
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