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st13003d-k


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                                                                                 ST13003D-K

                              High voltage fast-switching NPN power transistor

Features
   High voltage capability
   Low spread of dynamic parameters
   Minimum lot-to-lot spread for reliable operation
   Very high switching speed
   Integrated antiparallel collector-emitter diode
                                                                                                1
                                                                                            2
Applications                                                                            3

   Electronic ballast for fluorescent lighting                                 SOT-32


Description
                                                            Figure 1.   Internal schematic diagram
The device is manufactured using high voltage
multi-epitaxial planar technology for high
switching speeds and medium voltage capability.
It uses a cellular emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.




Table 1.     Device summary
   Order code           Marking                        Package                       Packaging

   ST13003D-K           13003D                          SOT-32                          Bag




September 2009                                   Doc ID 14182 Rev 2                                       1/8
                                                                                                    www.st.com   8
Electrical ratings                                                                         ST13003D-K


1           Electrical ratings

            Table 2.     Absolute maximum ratings
             Symbol                            Parameter                          Value         Unit

               VCES    Collector-emitter voltage (VBE = 0)                         700           V
               VCEO    Collector-emitter voltage (IB = 0)                          400           V
               VEBO    Emitter-base voltage (IC = 0, IB = 0.75 A, tP < 10 



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