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High voltage fast-switching NPN power transistor
Features
High voltage capability
Low spread of dynamic parameters
Minimum lot-to-lot spread for reliable operation
Very high switching speed
Integrated antiparallel collector-emitter diode
1
2
Applications 3
Electronic ballast for fluorescent lighting SOT-32
Description
Figure 1. Internal schematic diagram
The device is manufactured using high voltage
multi-epitaxial planar technology for high
switching speeds and medium voltage capability.
It uses a cellular emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
Table 1. Device summary
Order code Marking Package Packaging
ST13003D-K 13003D SOT-32 Bag
September 2009 Doc ID 14182 Rev 2 1/8
www.st.com 8
Electrical ratings ST13003D-K
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VCES Collector-emitter voltage (VBE = 0) 700 V
VCEO Collector-emitter voltage (IB = 0) 400 V
VEBO Emitter-base voltage (IC = 0, IB = 0.75 A, tP < 10
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