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ST13009
High voltage fast-switching
NPN power transistor
Features
Low spread of dynamic parameters
High voltage capability
Minimum lot-to-lot spread for reliable operation
Very high switching speed
Applications 2
3
1
Switch mode power supplies
TO-220
Description
The device is manufactured using high voltage
multi-epitaxial planar technology for high
switching speeds and high voltage capability. It Figure 1. Internal schematic diagram
uses a hollow emitter structure to enhance
switching speeds.
Table 1. Device summary
Order code Marking (1) Package Packaging
13009 L
ST13009 TO-220 Tube
13009 H
1. Product is pre-selected in DC current gain (group L and group H). STMicroelectronics reserves the right to ship either
groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.
June 2009 Doc ID 11491 Rev 3 1/11
www.st.com 11
Contents ST13009
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2/11 Doc ID 11491 Rev 3
ST13009 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VCEV Collector-emitter voltage (VBE = -1.5 V) 700 V
VCEO Collector-emitter voltage (IB = 0) 400 V
VEBO Emitter-base voltage (IC = 0) 12 V
IC Collector current 12 A
ICM Collector peak current (tP < 5ms) 24 A
IB Base current 6 A
IBM Base peak current (tP < 5ms) 12 A
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