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STV200N55F3
N-channel 55 V, 1.8 m, 200 A, PowerSO-10
STripFETTM Power MOSFET
Features
RDS(on)
Type VDSS ID (1)
max
10
STV200N55F3 55 V < 2.5 m 200 A
1. Current limited by package 1
PowerSO-10
Conduction losses reduced
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Low profile, very low parasitic inductance
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Application
Switching applications Figure 1.
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Internal schematic diagram and
Description ro
connection diagram (top view)
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This n-channel enhancement mode Power
MOSFET is the latest refinement of ST's
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STripFETTM process. The resulting transistor
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shows extremely high packing density for low on
resistance, rugged avalanche characteristics and
low gate charge.
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Table 1. Device summary
Order code Marking Package Packaging
STV200N55F3 200N55F3 PowerSO-10 Tape and reel
March 2009 Rev 3 1/12
www.st.com 12
Contents STV200N55F3
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 5
3 Test circuits .............................................. 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STV200N55F3 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (vgs = 0) 55 V
VGS Gate-source voltage ◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo