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STV250N55F3
N-channel 55 V, 1.5 m, 250 A, PowerSO-10
STripFETTM Power MOSFET
Features
RDS(on)
Type VDSS ID
max
10
STV250N55F3 55 V < 2.2 m 250 A
1
Conduction losses reduced PowerSO-10
Low profile, very low parasitic inductance
Application
Switching applications
Figure 1. Internal schematic diagram and
Description connection diagram (top view)
This n-channel enhancement mode Power
MOSFET is the latest refinement of
STMicroelectronics unique "single feature size"
strip-based process with less critical alignment
steps and therefore a remarkable manufacturing
reproducibility. The resulting transistor shows
extremely high packing density for low on-
resistance, rugged avalanche characteristics and
low gate charge.
Table 1. Device summary
Order code Marking Package Packaging
STV250N55F3 250N55F3 PowerSO-10 Tape and reel
March 2009 Rev 4 1/12
www.st.com 12
Contents STV250N55F3
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 Test circuits .............................................. 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STV250N55F3 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 55 V
VGS Gate-source voltage ◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo