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                                                             STW10NC70Z
                                        N-CHANNEL 700V - 0.58  - 10.6A TO-247
                                        Zener-Protected PowerMESHTMIII MOSFET

         TYPE            VDSS        RDS(on)         ID

    STW10NC70Z           700 V      < 0.75         10.6 A
s    TYPICAL RDS(on) = 0.58 
s    EXTREMELY HIGH dv/dt CAPABILITY GATE-
     TO-SOURCE ZENER DIODES
s    100% AVALANCHE TESTED
s    VERY LOW INTRINSIC CAPACITANCES
s    GATE CHARGE MINIMIZED
                                                                TO-247
DESCRIPTION
The third generation of MESH OVERLAYTM Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.

APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS,

  COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT




ABSOLUTE MAXIMUM RATINGS
     Symbol                              Parameter             Value      Unit
       VDS       Drain-source Voltage (VGS = 0)                 700        V
      VDGR       Drain-gate Voltage (RGS = 20 k)                700        V
       VGS       Gate- source Voltage                           

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