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High voltage fast-switching
NPN power transistor
Features
Low spread of dynamic parameters
High voltage capability
Minimum lot-to-lot spread for reliable operation
Very high switching speed
3
Application 2
1
Switch mode power supplies
TO-247
Description
The device is manufactured using high voltage
multi-epitaxial planar technology for high
switching speeds and medium voltage capability. Figure 1. Internal schematic diagram
It uses a Hollow emitter structure to enhance
switching speeds.
Table 1. Device summary
Order code Marking (1) Package Packaging
W13009 L
STW13009 TO-247 Tube
W13009 H
1. Product is pre-selected in DC current gain (group L and group H). STMicroelectronics reserves the right to ship either
groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.
October 2007 Rev 1 1/11
www.st.com 11
Contents STW13009
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2/11
STW13009 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
VCEV Collector-emitter voltage (VBE = -1.5 V) 700 V
VCEO Collector-emitter voltage (IB = 0) 400 V
VEBO Emitter-base voltage (IC = 0) 12 V
IC Collector current 12 A
ICM Collector peak current (tP < 5ms) 24 A
IB Base current 6 A
IBM Base peak current (tP < 5ms) 12 A
Ptot Total dissipation at Tc = 25
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