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                                                                                              STW16NB60
                                                     N-CHANNEL 600V - 0.3 - 16A TO-247
                                                                 PowerMeshTM MOSFET

        TYPE                VDSS         RDS(on)            ID

 STW16NB60                  600V        < 0.35          16 A
s   TYPICAL RDS(on) = 0.3
s   EXTREMELY HIGH dv/dt CAPABILITY
s   100% AVALANCHE TESTED
s   VERY LOW INTRINSIC CAPACITANCES                                                                            3
s   GATE CHARGE MINIMIZED                                                                                  2
                                                                                                       1

DESCRIPTION                                                                                TO-247
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout                       INTERNAL SCHEMATIC DIAGRAM
coupled with the Company's proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.



APPLICATIONS
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING

  EQUIPMENT AND UNINTERRUPTIBLE
  POWER SUPPLIES AND MOTOR DRIVE



ABSOLUTE MAXIMUM RATINGS
    Symbol                                      Parameter                                     Value                       Unit
      VDS         Drain-source Voltage (VGS = 0)                                               600                         V
     VDGR         Drain-gate Voltage (RGS = 20 k)                                              600                         V
      VGS         Gate- source Voltage                                                         

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