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                                                                            STW20NM50
                          N-CHANNEL 550V @ Tjmax - 0.20 - 20A TO-247
                                                  MDmeshTM MOSFET

        TYPE               VDSS         RDS(on)           ID
                         (@Tjmax)
 STW20NM50                 550V        < 0.25            20 A
   TYPICAL RDS(on) = 0.20
   HIGH dv/dt AND AVALANCHE CAPABILITIES
   100% AVALANCHE TESTED                                                                    3
   LOW INPUT CAPACITANCE AND GATE                                                   1
                                                                                        2


   CHARGE                                                                 TO-247
   LOW GATE INPUT RESISTANCE
   TIGHT PROCESS CONTROL AND HIGH
   MANUFACTURING YIELDS

DESCRIPTION
The MDmeshTM is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company's PowerMESHTM horizontal                  INTERNAL SCHEMATIC DIAGRAM
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company's proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition's products.

APPLICATIONS
The MDmeshTM family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.




ABSOLUTE MAXIMUM RATINGS
   Symbol                               Parameter                           Value               Unit
     VGS         Gate- source Voltage                                        

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