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                                                                             STW20NM60
                                                   N-CHANNEL 600V - 0.26 - 20A TO-247
                                                             MDmeshTMPower MOSFET

         TYPE               VDSS         RDS(on)            ID

    STW20NM60               600V        < 0.29          20 A
n    TYPICAL RDS(on) = 0.26
n    HIGH dv/dt AND AVALANCHE CAPABILITIES
n    100% AVALANCHE TESTED
n    LOW INPUT CAPACITANCE AND GATE
                                                                                              3
     CHARGE                                                                               2
                                                                                      1
n    LOW GATE INPUT RESISTANCE
n    TIGHT PROCESS CONTROL AND HIGH
     MANUFACTURING YIELDS                                                   TO-247

DESCRIPTION
The MDmeshTM is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company's PowerMESHTM horizontal
layout. The resulting product has an outstanding low             INTERNAL SCHEMATIC DIAGRAM
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company's proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition's products.

APPLICATIONS
The MDmeshTM family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.



ABSOLUTE MAXIMUM RATINGS
     Symbol                                     Parameter                     Value               Unit
       VDS        Drain-source Voltage (VGS = 0)                               600                 V
      VDGR        Drain-gate Voltage (RGS = 20 k)                              600                 V
       VGS        Gate- source Voltage                                         

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