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                                                                                                     STW27NM60ND
                                                      N-channel 600 V, 0.13 , 21 A TO-247
                                                  FDmeshTM Power MOSFET (with fast diode)
                                                                                                                                   Preliminary Data


Features
                           VDSS @            RDS(on)
        Type                                                   ID
                            TJMAX             max
 STW27NM60ND                 650 V          < 0.16           21 A

    The worldwide best RDS(on)*area amongst the                                                                                3
                                                                                                                           2
    fast recovery diode devices                                                                                        1
    100% avalanche tested
                                                                                                            TO-247
    Low input capacitance and gate charge
    Low gate input resistance
    Extremely high dv/dt and avalanche
    capabilities.

Application                                                                  Figure 1.         Internal schematic diagram
    Switching applications
    

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