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                                                                                                   STW7NB80
                                      N - CHANNEL 800V - 1.6 - 6.5A - TO-247
                                                    PowerMESHTM MOSFET
                                                                                                         PRELIMINARY DATA

         TYPE              V DSS        R DS(on)       ID
STW7NB80                  800 V        < 1.9          6.5 A
s    TYPICAL RDS(on) = 1.6 
s    EXTREMELY HIGH dv/dt CAPABILITY
s    100% AVALANCHE TESTED
s    VERY LOW INTRINSIC CAPACITANCES
s    GATE CHARGE MINIMIZED
                                                                                                                  3
DESCRIPTION                                                                                                   2
                                                                                                          1
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an
advanced family of power MOSFETs with                                                         TO-247
outstanding performances. The new patent
pending strip layout coupled with the Company's
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
                                                                         INTERNAL SCHEMATIC DIAGRAM
and switching characteristics.

APPLICATIONS
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING

  EQUIPMENT AND UNINTERRUPTIBLE
  POWER SUPPLIES AND MOTOR DRIVE
s HIGH CURRENT, HIGH SPEED SWITCHING




ABSOLUTE MAXIMUM RATINGS
    Symbol                                 Parameter                                            Value                 Unit
       V DS       Drain-source Voltage (V GS = 0)                                                800                    V
      V DGR       Drain- gate Voltage (R GS = 20 k)                                              800                    V
      V GS        Gate-source Voltage                                                            

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