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                                                                                         STW47NM60
                                                N-CHANNEL 600V - 0.075 - 47A TO-247
                                                           MDmeshTMPower MOSFET
                                                                                                          ADVANCED DATA

     TYPE           VDSS      RDS(on)      Rds(on)*Qg    ID

 STW47NM60          600V      < 0.09        7.2 *nC     47 A
   TYPICAL RDS(on) = 0.075
   HIGH dv/dt AND AVALANCHE CAPABILITIES
   100% AVALANCHE TESTED
   LOW INPUT CAPACITANCE AND GATE
   CHARGE                                                                                                 3
                                                                                                      2
   LOW GATE INPUT RESISTANCE                                                                      1


   TIGHT PROCESS CONTROL AND HIGH
                                                                                        TO-247
   MANUFACTURING YIELDS

DESCRIPTION
This improved version of MDmeshTM which is based
on Multiple Drain process represents the new
benchmark in high voltage MOSFETs. The resulting
product exhibits even lower on-resistance, impres-                  INTERNAL SCHEMATIC DIAGRAM
sively high dv/dt and excellent avalanche character-
istics. The adoption of the Company's proprietary
strip technique yields overall performances that are
significantly better than that of similar competition's
products.

APPLICATIONS
The MDmeshTM family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.



ABSOLUTE MAXIMUM RATINGS
   Symbol                                 Parameter                                    Value                       Unit
      VDS         Drain-source Voltage (VGS = 0)                                        600                            V
     VDGR         Drain-gate Voltage (RGS = 20 k)                                       600                            V
      VGS         Gate- source Voltage                                                  

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