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STW55NM60N
N-channel 600 V, 0.047 , 51 A, MDmeshTM II Power MOSFET
TO-247
Features
VDSS RDS(on)
Type ID
(@Tjmax) max
STW55NM60N 650 V < 0.060 51 A
100% avalanche tested
3
Low input capacitance and gate charge 2
1
Low gate input resistance TO-247
Application
Switching applications
Description
Figure 1. Internal schematic diagram
This series of devices is designed using the
second generation of MDmeshTM technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Table 1. Device summary
Order code Marking Package Packaging
STW55NM60N W55NM60N TO-247 Tube
July 2008 Rev 4 1/12
www.st.com 12
Contents STW55NM60N
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 Test circuit ................................................ 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STW55NM60N Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 600 V
VGS Gate- source voltage ◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo