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                                                                                           STW6NC90Z
                                           N-CHANNEL 900V - 2.1 - 5.2A TO-247
                                         Zener-Protected PowerMESHTMIII MOSFET

         TYPE             VDSS        RDS(on)             ID

    STW6NC90Z             900 V       < 2.5           5.2A
s    TYPICAL RDS(on) = 2.1
s    EXTREMELY HIGH dv/dt CAPABILITY
s    GATE-TO-SOURCE ZENER DIODES
s    100% AVALANCHE TESTED
s    VERY LOW INTRINSIC CAPACITANCES
s    GATE CHARGE MINIMIZED
                                                                                            TO-247
DESCRIPTION
The third generation of MESH OVERLAYTM Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.

APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS,

  COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT




ABSOLUTE MAXIMUM RATINGS
     Symbol                               Parameter                                        Value            Unit
       VDS       Drain-source Voltage (VGS = 0)                                             900              V
      VDGR       Drain-gate Voltage (RGS = 20 k)                                            900              V
       VGS       Gate- source Voltage                                                       

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