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STW77N65M5
N-channel 650 V, 0.033 , 69 A, MDmeshTM V Power MOSFET
TO-247
Features
VDSS
Type RDS(on) max ID
@TjMAX
STW77N65M5 710 V < 0.038 69 A
TO-247 worldwide best RDS(on)
Higher VDSS rating 3
2
Higher dv/dt capability 1
Excellent switching performance
TO-247
Easy to drive
100% avalanche tested
Application
Figure 1. Internal schematic diagram
Switching applications
Description
MDmesh V is a revolutionary Power MOSFET
technology, which combines an innovative
proprietary vertical process with the well known
company`s PowerMESHTM horizontal layout. The
resulting product has an extremely low on-
resistance, unmatched among silicon-based
Power MOSFETs, making it especially suited for
applications which require superior power density
and outstanding efficiencies.
Table 1. Device summary
Order codes Marking Package Packaging
STW77N65M5 77N65M5 TO-247 Tube
July 2009 Doc ID 15322 Rev 2 1/13
www.st.com 13
Contents STW77N65M5
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 5
3 Test circuits .............................................. 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/13 Doc ID 15322 Rev 2
STW77N65M5 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VGS Gate- source voltage 25 V
ID Drain current (continuous) at TC = 25 ◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo