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                                                                                           STW80NF10
                              N-CHANNEL 100V - 0.012 - 80A TO-247
                      LOW GATE CHARGE STripFETTM POWER MOSFET

         TYPE               VDSS         RDS(on)        ID

    STW80NF10              100 V       < 0.015      80 A
s    TYPICAL RDS(on) = 0.012
s    EXCEPTIONAL dv/dt CAPABILITY
s    100% AVALANCHE TESTED
s    APPLICATION ORIENTED
     CHARACTERIZATION                                                                                        3
                                                                                                         2
                                                                                                     1

                                                                                         TO-247
DESCRIPTION
This Power Mosfet series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary                       INTERNAL SCHEMATIC DIAGRAM
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.



APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS

s UPS AND MOTOR CONTROL




ABSOLUTE MAXIMUM RATINGS
     Symbol                                 Parameter                                     Value                         Unit
       VDS        Drain-source Voltage (VGS = 0)                                           100                           V
      VDGR        Drain-gate Voltage (RGS = 20 k)                                          100                           V
       VGS        Gate- source Voltage                                                     

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