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                                                                                     STW8NB90
                                                                                    STH8NB90FI
                  N-CHANNEL 900V - 1.1  - 8 A TO-247/ISOWATT218
                                            PowerMeshTM MOSFET
         TYPE             VDSS        RDS(on)           ID

    STW8NB90             900 V       < 1.45             8A
    STH8NB90FI           900 V       < 1.45             5A
s    TYPICAL RDS(on) = 1.1 
s    EXTREMELY HIGH dv/dt CAPABILITY
s    100% AVALANCHE TESTED
                                                                                                                  3
s    VERY LOW INTRINSIC CAPACITANCES                                                 3
                                                                                                              2
                                                                                2
s    GATE CHARGE MINIMIZED                                                 1                              1

DESCRIPTION                                                      TO-247                        ISOWATT218
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company's proprieraty edge termi-           INTERNAL SCHEMATIC DIAGRAM
nation structure, gives the lowest R DS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR WELDING

  EQUIPMENT

ABSOLUTE MAXIMUM RATINGS
     Symbol                              Parameter                                  Value                     Unit
                                                                  STW8NB90                   STH8NB90FI
       VDS       Drain-source Voltage (VGS = 0)                                     900                           V
      VDGR       Drain-gate Voltage (RGS = 20 k)                                    900                           V
       VGS       Gate- source Voltage                                               

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