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                                                                          STW8NC80Z
                                           N-CHANNEL 800V - 1.3  - 6.7A TO-247
                                         Zener-Protected PowerMESHTMIII MOSFET

         TYPE             VDSS        RDS(on)             ID

    STW8NC80Z             800 V       < 1.5          6.7 A
n    TYPICAL RDS(on) = 1.3 
n    EXTREMELY HIGH dv/dt CAPABILITY GATE-
     TO-SOURCE ZENER DIODES
n    100% AVALANCHE TESTED
n    VERY LOW INTRINSIC CAPACITANCES
n    GATE CHARGE MINIMIZED

DESCRIPTION                                                             TO-247
The third generation of MESH OVERLAYTM Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-              INTERNAL SCHEMATIC DIAGRAM
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.

APPLICATIONS
n SINGLE-ENDED SMPS IN MONITORS,
  COMPUTER AND INDUSTRIAL APPLICATION
n WELDING EQUIPMENT




ABSOLUTE MAXIMUM RATINGS
     Symbol                               Parameter                       Value             Unit
       VDS       Drain-source Voltage (VGS = 0)                            800               V
      VDGR       Drain-gate Voltage (RGS = 20 k)                           800               V
       VGS       Gate- source Voltage                                      

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