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                                                                                STW8NC90Z
                                           N-CHANNEL 900V - 1.1  - 7.6A TO-247
                                         Zener-Protected PowerMESHTMIII MOSFET

         TYPE             VDSS        RDS(on)             ID

    STW8NC90Z             900 V       < 1.38         7.6 A
s    TYPICAL RDS(on) = 1.1 
s    EXTREMELY HIGH dv/dt CAPABILITY GATE-
     TO-SOURCE ZENER DIODES
s    100% AVALANCHE TESTED
s    VERY LOW INTRINSIC CAPACITANCES
s    GATE CHARGE MINIMIZED


                                                                                                  s)
                                                                                 TO-247

                                                                                               t(
DESCRIPTION


                                                                                          uc
The third generation of MESH OVERLAYTM Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
                                                                                        d
                                                                                ro
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
                                                                              P
ed by a large variety of single-switch applications.

APPLICATIONS
                                                                      le te
                                                                    so
s SINGLE-ENDED SMPS IN MONITORS,




                                                                 Ob
  COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT




                                                               -
ABSOLUTE MAXIMUM RATINGS
                                             ct (s)
                                      du
     Symbol                               Parameter                             Value             Unit


                        ro
       VDS       Drain-source Voltage (VGS = 0)                                  900               V
      VDGR       Drain-gate Voltage (RGS = 20 k)
                       P
                                                                                 900               V
       VGS
                     e
                 Gate- source Voltage                                            

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