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STW9NB80
N-CHANNEL 800V - 0.85 - 9.3A TO-247
PowerMESHTM MOSFET
TYPE VDSS RDS(on) ID
STW9NB80 800V <1 9A
s TYPICAL RDS(on) = 0.85
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES 3
s GATE CHARGE MINIMIZED 2
1
s)
DESCRIPTION TO-247
t(
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout INTERNAL SCHEMATIC DIAGRAM
d uc
ro
coupled with the Company's proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
P
te
unrivalled gate charge and switching characteris-
tics.
le
so
Ob
APPLICATIONS
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
-
(s)
EQUIPMENT AND UNINTERRUPTIBLE
ct
POWER SUPPLIES AND MOTOR DRIVE
o du
Pr
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
e
let
VDS Drain-source Voltage (VGS = 0) 800 V
VDGR Drain-gate Voltage (RGS = 20 k) 800 V
VGS
o
bs
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