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STWH13009
High voltage fast-switching NPN power transistor
Features .
High voltage capability
Low spread of dynamic parameters
Very high switching speed
Applications
3
Switching mode power supplies 2
1
TO-247
Description
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high Figure 1. Internal schematic diagram
switching speeds anh high voltage capability.
It uses a Hollow Emitter structure to enhance
switching speeds.
Table 1. Device summary
Order code Marking Package Packaging
STWH13009 WH13009 TO-247 Tube
October 2007 Rev 1 1/9
www.st.com 9
Absolute maximum ratings STWH13009
1 Absolute maximum ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VCEV Collector-emitter voltage (VBE = -1.5V) 700 V
VCEO Collector-emitter voltage (IB = 0) 400 V
VEBO Emitter-base voltage (IC = 0) 12 V
IC Collector current 12 A
ICM Collector peak current (tp < ms) 24 A
IB Base current 6 A
IBM Base peak current (tp < ms) 12 A
PTOT Total dissipation at Tcase = 25◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo