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STX112
STX117
Complementary power Darlington transistors
Features
.
Good hFE linearity
High fT frequency
Monolithic Darlington configuration with
integrated antiparallel collector-emitter diode
Application
Linear and switching industrial equipment TO-92 AP
Description
The devices are manufactured in planar Figure 1. Internal schematic diagram
technology with "base island" layout and
monolithic Darlington configuration.
R1 typ. = 15 k R2 typ. = 100
Table 1. Device summary
Order codes Marking Polarity Package Packaging
STX112-AP X112 NPN TO92-AP Ammopack
STX117-AP X117 PNP TO92-AP Ammopack
April 2010 Doc ID 6881 Rev 4 1/9
www.st.com 9
Absolute maximum ratings STX112, STX117
1 Absolute maximum ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VCBO Collector-base voltage (IE = 0)
100 V
VCEO Collector-emitter voltage (IB = 0)
VEBO Emitter-base voltage (IC = 0) 5 V
IC Collector current 2 A
ICM Collector peak current 4 A
IB Base current 0.05 A
PTOT Total dissipation at Tamb = 25 ◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo