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                                                                                     STX13003

                              High voltage fast-switching NPN power transistor


Features
   High voltage capability
   Low spread of dynamic parameters
   Minimum lot-to-lot spread for reliable operation
   Very high switching speed

Applications
   Compact fluorescent lamps (CFLs)
   SMPS for battery charger                                        TO-92               TO-92AP

Description
                                                           Figure 1.   Internal schematic diagram
The device is manufactured using high voltage
multi epitaxial planar technology for high switching
speeds and high voltage capability. It uses a
cellular emitter structure with planar edge
termination to enhance switching speeds while
maintaining the wide RBSOA.
The STX13003G and STX13003G-AP are
supplied using halogen-free molding compound.




Table 1.     Device summary
       Order codes                   Marking                     Package               Packaging

        STX13003                     X13003                       TO-92                   Bulk
       STX13003G                    X13003G                       TO-92                   Bulk
      STX13003-AP                    X13003                      TO-92AP               Ammopack
      STX13003G-AP                  X13003G                      TO-92AP               Ammopack




July 2008                                              Rev 5                                          1/11
                                                                                                 www.st.com   11
Electrical ratings                                                                              STX13003


1           Electrical ratings

            Table 2.      Absolute maximum rating
              Symbol                             Parameter                           Value        Unit
               VCES       Collector-emitter voltage (VBE = 0)                         700          V
               VCEO       Collector-emitter voltage (IB = 0)                          400          V
               VEBO       Collector-base voltage (IC = 0, IB = 0.5A, tP < 10 ms)   V(BR)EBO        V
                 IC       Collector current                                            1           A
                ICM       Collector peak current (tP < 5 ms)                           3           A
                 IB       Base current                                                0.5          A
                IBM       Base peak current (tP < 5 ms)                               1.5          A
               PTOT       Total dissipation at Tc = 25 



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