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STY112N65M5
N-channel 650 V, 0.019 96 A, MDmeshTM V Power MOSFET
,
Max247
Features
VDSS
Order code RDS(on) max ID
@TjMAX
STY112N65M5 710 V < 0.022 96 A
Max247 worldwide best RDS(on)
Higher VDSS rating 3
2
Higher dv/dt capability 1
Excellent switching performance
Max247
Easy to drive
100% avalanche tested
Application
Figure 1. Internal schematic diagram
Switching applications
Description
The device is an N-channel MDmeshTM V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics' well-known
PowerMESHTM horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1. Device summary
Order code Marking Package Packaging
STY112N65M5 112N65M5 Max247 Tube
May 2011 Doc ID 15321 Rev 2 1/12
www.st.com 12
Contents STY112N65M5
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 Test circuits .............................................. 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12 Doc ID 15321 Rev 2
STY112N65M5 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VGS Gate- source voltage 25 V
ID Drain current (continuous) at TC = 25 ◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo