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                                                                                        STY140NS10
                                   N-CHANNEL 100V - 0.009  - 140A MAX247TM
                                         MESH OVERLAYTM POWER MOSFET

         TYPE               VDSS         RDS(on)    ID

    STY140NS10              100V        <0.011     140A
s    TYPICAL RDS(on) = 0.009
s    STANDARD THRESHOLD DRIVE
s    100% AVALANCHE TESTED

DESCRIPTION
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an advanced                                                       3
family    of   power MOSFETs         with   outstanding                                                2
performances. The new patent pending strip layout                                                  1
coupled with the Company's proprietary edge termination
structure, gives the lowest RDS(on) per area,                                        Max247TM
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteristics.

                                                            INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED

s SWITCH MODE POWER SUPPLY (SMPS)




ABSOLUTE MAXIMUM RATINGS
     Symbol                          Parameter                                 Value                             Unit
       VDS        Drain-source Voltage (VGS = 0)                                100                                V
      VDGR        Drain-gate Voltage (RGS = 20 k)                               100                                V
       VGS        Gate- source Voltage                                          

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