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                                                                                           STB3NC90Z
                                               N-CHANNEL 900V - 3.2 - 3.5A D2PAK
                                            Zener-Protected PowerMESHTMIII MOSFET

         TYPE               VDSS         RDS(on)            ID

    STB3NC90                900V         < 3.5          3.5 A
s    TYPICAL RDS(on) = 3.2
s    EXTREMELY HIGH dv/dt AND CAPABILITY GATE
     TO - SOURCE ZENER DIODES
                                                                                                      3
s    100% AVALANCHE TESTED                                                                        1
s    VERY LOW GATE INPUT RESISTANCE
s    GATE CHARGE MINIMIZED                                                               D2PAK

DESCRIPTION
The third generation of MESH OVERLAYTM Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performance as requested by a large variety
of single-switch applications.

APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS,

  COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT




ABSOLUTE MAXIMUM RATINGS
     Symbol                                     Parameter                                   Value                        Unit
       VDS        Drain-source Voltage (VGS = 0)                                             900                          V
      VDGR        Drain-gate Voltage (RGS = 20 k)                                            900                          V
       VGS        Gate- source Voltage                                                      

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