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                                                                                       STB100NF04L
                                            N-CHANNEL 40V - 0.0036  - 100A D2PAK
                                                    STripFETTM II POWER MOSFET

         TYPE               VDSS         RDS(on)     ID

    STB100NF04L             40 V       <0.0042      100 A
s    TYPICAL RDS(on) = 0.0036 
s    LOW THRESHOLD DRIVE
s    100% AVALANCHE TESTED
s    LOGIC LEVEL DEVICE
                                                                                                   3
                                                                                               1
DESCRIPTION
This Power MOSFET is the latest development of                                           D2PAK
                                                                                         TO-263
STMicroelectronis unique "Single Feature SizeTM"
strip-based process. The resulting transistor                                          (Suffix "T4")
shows extremely high packing density for low on-              ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
                                                             INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED

s MOTOR CONTROL, AUDIO AMPLIFIERS

s DC-DC & DC-AC CONVERTERS

s SOLENOID AND RELAY DRIVERS




ABSOLUTE MAXIMUM RATINGS
     Symbol                          Parameter                                 Value                              Unit
       VDS         Drain-source Voltage (VGS = 0)                                40                                V
      VDGR         Drain-gate Voltage (RGS = 20 k)                               40                                V
       VGS         Gate- source Voltage                                         

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