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N-channel 24V - 0.0052 - 60A - D2PAK
STripFETTM III Power MOSFET
General features
Type VDSS RDS(on) ID
STB100NH02L 24V <0.006 60A(1)
1. Value limited by wire bonding
RDS(ON) * Qg industry's benchmark
Conduction losses reduced 3
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Switching losses reduced
D2PAK
Low threshold device
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Description
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The STB100NH02L utilizes the latest advanced
design rules of ST's proprietary STripFETTM P ro
technology. This is suitable fot the most
demanding DC-DC converter applications where te
Internal schematic diagram
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high efficiency is to be achieved.
Applications
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Switching application
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Order codes
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O bs Part number
STB100NH02LT4
Marking
B100NH02L
Package
D 2PAK
Packaging
Tape & reel
June 2006 Rev 4 1/13
www.st.com 13
Contents STB100NH02L
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 Test circuit ................................................ 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6
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Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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2/13
STB100NH02L Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
Vspike(1) Drain-source voltage rating 30 V
VDS Drain-source voltage (VGS = 0) 24 V
VDGR Drain-gate voltage (RGS = 20 k) 24 V
VGS Gate- source voltage
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