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                                                                                                    STB11NB40
                                                 N - CHANNEL ENHANCEMENT MODE
                                                           PowerMESHTM MOSFET
         TYPE             V DSS         R DS(on)         ID
STB11NB40                400 V        < 0.55           10.7 A
s    TYPICAL RDS(on) = 0.48 
s    EXTREMELY HIGH dV/dt CAPABILITY
s    100% AVALANCHE TESTED
s    VERY LOW INTRINSIC CAPACITANCES
s    GATE CHARGE MINIMIZED

DESCRIPTION                                                                                    3                              3
Using the latest high voltage MESH OVERLAYTM                                                12                          1
process, SGS-Thomson has designed an
advanced family of power MOSFETs with                                            I2PAK                         D2PAK
outstanding performances. The new patent                                         TO-262                        TO-263
pending strip layout coupled with the Company's                                (suffix "-1")                 (suffix "T4")
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.                                             INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
  EQUIPMENT AND UNINTERRUPTIBLE
  POWER SUPPLIES AND MOTOR DRIVE




ABSOLUTE MAXIMUM RATINGS
    Symbol                                 Parameter                                               Value                          Uni t
      V DS       Drain-source Voltage (V GS = 0)                                                   400                             V
     V DGR       Drain- gate Voltage (R GS = 20 k)                                                 400                             V
      V GS       Gate-source Voltage                                                               

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