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                                                                                     STB160NF03L
                                            N-CHANNEL 30V - 0.0021 - 160A D2PAK
                                                     STripFETTM POWER MOSFET

         TYPE              VDSS         RDS(on)         ID

    STB160NF03L            30 V       < 0.0030      160 A
s    TYPICAL RDS(on) = 0.0021
s    LOW THRESHOLD DRIVE
s    ULTRA LOW ON-RESISTANCE
s    VERY LOW GATE CHARGE
s    100% AVALANCHE TESTED                                                                             3
                                                                                                  1
DESCRIPTION                                                                              D2PAK
This Power MOSFET is the latest development of                                          (TO-263)
STMicroelectronics unique "Single Feature
SizeTM" strip-based process. The resulting tran-
sistor shows extremely high packing density with
ultra low on-resistance, superior switching charac-
                                                                       INTERNAL SCHEMATIC DIAGRAM
teristics and less critical alignment steps therefore
a remarkable manufacturing reproducibility. This
device is particularly suitable for high current, low
voltage switching application where efficiency is
crucial.



APPLICATIONS
s BUCK CONVERTERS IN HIGH

  PERFORMANCE TELECOM AND VRMs
s DC-DC CONVERTERS




ABSOLUTE MAXIMUM RATINGS
     Symbol                                 Parameter                                     Value                         Unit
       VDS        Drain-source Voltage (VGS = 0)                                           30                            V
      VDGR        Drain-gate Voltage (RGS = 20 k)                                          30                            V
       VGS        Gate- source Voltage                                                     

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