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                                                                                                         STB16NB25
                                N - CHANNEL 250V - 0.220 - 16 A - TO-263
                                                PowerMESHTM MOSFET
                                                                                                                  PRELIMINARY DATA
   TYPE                  V DSS         R DS(on)          ID
STB16NB25                250 V        < 0.250           16 A
s    TYPICAL RDS(on) = 0.220 
s    100% AVALANCHE TESTED
s    VERY LOW INTRINSIC CAPACITANCES
s    GATE CHARGE MINIMIZED                                                                                          3
                                                                                                              1
s    EXTREMELY HIGH dv/dt CAPABILITY
s    FOR THROUGH-HOLE VERSION CONTACT
     SALES OFFICE                                                                                     D2PAK
                                                                                                      TO-263
DESCRIPTION                                                                                         (Suffix "T4")
Using     the latest high        voltage   MESH
OVERLAYTM process,           SGS-Thomson      has
designed an advanced family of Power
MOSFETs with outstanding performance. The
new patent pending strip layout coupled with the
Company's        proprietary   edge    termination
structure, gives the lowest RDS(on) per area,                                    INTERNAL SCHEMATIC DIAGRAM
exceptional avalanche and dv/dt capabilities and
unrivalled    gate      charge    and    switching
characteristics.

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR WELDING

  EQUIPMENT AND UNINTERRUPTIBLE R E

ABSOLUTE MAXIMUM RATINGS
    Symbol                             Parameter                                                      Value                       Unit
       V DS     Drain-source Voltage (V GS = 0)                                                        250                          V
      VDGR      Drain- gate Voltage (R GS = 20 k)                                                      250                          V
       V GS     Gate-source Voltage                                                                    

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