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                                                                                         STB185N55F3
                                                                                         STP185N55F3
                                   N-channel 55V - 3.2m - 120A - D2PAK/TO-220
                                                     STripFETTM Power MOSFET

Features
       Type          VDSS     RDS(on)     ID         Pw
                                               (1)
   STB185N55F3        55V     3.5m      120A         330W
                                               (1)
   STP185N55F3        55V     3.8m      120A         330W
1. Value limited by wire bonding
                                                                                             3              3
    Ultra low on-resistance                                                              2              1
                                                                                     1
    100% avalanche tested
                                                                            TO-220                D2PAK
Description
This n-channel enhancement mode Power
MOSFET is the latest refinement of
STMicroelectronics unique "single feature sizeTM"
strip-based process with less critical alignment                Figure 1.     Internal schematic diagram
steps and therefore a remarkable manufacturing
reproducibility. The resulting transistor shows
extremely high packing density for low on
resistance, rugged avalanche characteristics and
low gate charge.

Applications
    Switching applications
    

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