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                                                         STP19NB20 - STP19NB20FP
                                                                      STB19NB20-1
        N-CHANNEL 200V - 0.15 - 19A - TO-220/TO-220FP/I2PAK
                                      PowerMESHTM MOSFET

         TYPE               VDSS         RDS(on)         ID

    STP19NB20              200 V        < 0.18          19 A
    STP19NB20FP            200 V        < 0.18          10 A
    STB19NB20-1            200 V        < 0.18          19 A
s    TYPICAL RDS(on) = 0.15                                                                                                         3
                                                                                                                                2
s    EXTREMELY HIGH dv/dt CAPABILITY                                                                                        1
s    100% AVALANCHE TESTED                                            TO-220                                          TO-220FP
s    NEW HIGH VOLTAGE BENCHMARK


                                                                                                                          s)
s    GATE CHARGE MINIMIZED
                                                                                                           3


                                                                                                                       t(
                                                                                                      12
DESCRIPTION                                                                                    2
                                                                                              I PAK

                                                                                                        uc
Using the latest high voltage MESH OVERLAYTM                                              (Tabless TO-220)
process, STMicroelectronics has designed an ad-
                                                                                                      d
                                                                                             ro
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout                         INTERNAL SCHEMATIC DIAGRAM
coupled with the Company's proprieraty edge termi-
                                                                                           P
                                                                                 te
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
                                                                              le
                                                                    so
tics.



                                                                 Ob
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITH MODE POWER SUPPLIES (SMPS)
                                                               -
                                                   (s)
s DC-AC CONVERTERS FOR TELECOM,




                                                ct
  INDUSTRIAL AND CONSUMER
  ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS
                                    o du
                        Pr
     Symbol                                 Parameter                                        Value                         Unit
                                                                           STP(B)19NB20(-1)          STP19NB20FP

                      e
               let
       VDS        Drain-source Voltage (VGS = 0)                                              200                           V
      VDGR        Drain-gate Voltage (RGS = 20 k)                                             200                           V
             o
    bs
       VGS        Gate- source Voltage                                                        

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