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                                                                                            STB5NA80
                                                 N - CHANNEL ENHANCEMENT MODE
                                                         POWER MOS TRANSISTOR
                                                                                             PRELIMINARY DATA
        TYPE              V DSS         R DS(on)        ID
ST B5NA80                800 V         < 2.4           4.7 A

s   TYPICAL RDS(on) = 1.8 
s   AVALANCHE RUGGED TECHNOLOGY
s   100% AVALANCHE TESTED
s   REPETITIVE AVALANCHE DATA AT 100oC
s   LOW GATE CHARGE
s   VERY HIGH CURRENT CAPABILITY
                                                                                      3                 3
s   APPLICATION ORIENTED                                                           12               1
    CHARACTERIZATION
s   THROUGH-HOLE I2PAK (TO-262) POWER
                                                                          I2PAK                D2PAK
    PACKAGE IN TUBE (SUFFIX "-1")
s   SURFACE-MOUNTING D2PACK (TO-263)                                      TO-262               TO-263
    POWER PACKAGE IN TUBE (NO SUFFIX)
    OR IN TAPE & REEL (SUFFIX "T4")

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING                                   INTERNAL SCHEMATIC DIAGRAM
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
  ABS, AIR-BAG, LAMPDRIVERS, Etc.)




ABSOLUTE MAXIMUM RATINGS
    Symbol                             Parameter                                    Value                   Uni t
     V DS      Drain-source Voltage (V GS = 0)                                       800                      V
     VDGR      Drain- gate Voltage (R GS = 20 k)                                     800                      V
     V GS      Gate-source Voltage                                                   

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