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                                                                                                    STB8NS25
                                                     N-CHANNEL 250V - 0.38 - 8A D2PAK
                                                           MESH OVERLAYTM MOSFET

         TYPE               VDSS         RDS(on)            ID

    STB8NS25               250 V        < 0.45          8A
s    TYPICAL RDS(on) = 0.38 
s    EXTREMELY HIGH dv/dt CAPABILITY
s    100% AVALANCHE TESTED
                                                                                                          3
                                                                                                     1
DESCRIPTION
Using the latest high voltage MESH OVERLAYTM                                                 D2PAK
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company's proprietary edge termina-
tion structure, makes it suitable in coverters for                      INTERNAL SCHEMATIC DIAGRAM
lighting applications.

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITH MODE POWER SUPPLIES (SMPS)

s DC-DC CONVERTERS FOR TELECOM,

  INDUSTRIAL, AND LIGHTING EQUIPMENT




ABSOLUTE MAXIMUM RATINGS
     Symbol                                     Parameter                                    Value                   Unit
       VDS        Drain-source Voltage (VGS = 0)                                               250                    V
      VDGR        Drain-gate Voltage (RGS = 20 k)                                              250                    V
       VGS        Gate- source Voltage                                                        

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