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                                                                                        STBV45

                              High voltage fast-switching NPN power transistor


Features
   High voltage capability
   Low spread of dynamic parameters
   Minimum lot-to-lot spread for reliable operation
   Very high switching speed

Applications
   Compact fluorescent lamps (CFLs)
   SMPS for battery charger                                        TO-92               TO-92AP

Description
                                                           Figure 1.   Internal schematic diagram
The device is manufactured using high voltage
multi epitaxial planar technology for high switching
speeds and high voltage capability. It uses a
cellular emitter structure with planar edge
termination to enhance switching speeds while
maintaining the wide RBSOA.
The STBV45G and STBV45G-AP are supplied
using halogen-free molding compound.




Table 1.       Device summary
       Order codes                   Marking                     Package               Packaging

           STBV45                     BV45                        TO-92                   Bulk
           STBV45G                   BV45G                        TO-92                   Bulk
       STBV45-AP                      BV45                       TO-92AP               Ammopack
       STBV45G-AP                    BV45G                       TO-92AP               Ammopack




October 2008                                           Rev 6                                          1/10
                                                                                                 www.st.com   10
Electrical ratings                                                                     STBV45


1           Electrical ratings

            Table 2.       Absolute maximum rating
              Symbol                             Parameter                  Value       Unit

               VCES       Collector-emitter voltage (VBE = 0)                700         V
               VCEO       Collector-emitter voltage (IB = 0)                 400         V
               VEBO       Emitter-base voltage (IC = 0)                       9          V
                 IC       Collector current                                 0.75         A
                ICM       Collector peak current (tP < 5 ms)                 1.5         A
                 IB       Base current                                       0.4         A
                IBM       Base peak current (tP < 5 ms)                     0.75         A
               PTOT       Total dissipation at Tc = 25 

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