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                                                                                                              STD3NB50
                                  N - CHANNEL 500V - 2.5 - 3A - IPAK/DPAK
                                                  PowerMESHTM MOSFET
                                                                                                                      PRELIMINARY DATA

         TYPE             V DSS         R DS(on)          ID
STD3NB50                 500 V         < 2.8             3A

s    TYPICAL RDS(on) = 2.5 
s    EXTREMELY HIGH dv/dt CAPABILITY                                                                              3
s    100% AVALANCHE TESTED                                                                                    2                               3
                                                                                                          1
s    VERY LOW INTRINSIC CAPACITANCES                                                                                                  1
s    GATE CHARGE MINIMIZED
                                                                                 IPAK                                  DPAK
DESCRIPTION                                                                     TO-251                                 TO-252
Using the latest high voltage MESH OVERLAYTM                                  (Suffix "-1")                           (Suffix "T4")
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company's
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge                                INTERNAL SCHEMATIC DIAGRAM
and switching characteristics.

APPLICATIONS
s SWITCH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR WELDING

  EQUIPMENT AND UNINTERRUPTIBLE
  POWER SUPPLIES AND MOTOR DRIVE




ABSOLUTE MAXIMUM RATINGS
    Symbol                                 Parameter                                                   Value                          Unit
      V DS       Drain-source Voltage (V GS = 0)                                                         500                              V
     V DGR       Drain- gate Voltage (R GS = 20 k)                                                       500                              V
      V GS       Gate-source Voltage                                                                    

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