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STF10NM50N, STP10NM50N
N-channel 500 V, 0.53 , 7 A TO-220, TO-220FP, DPAK
MDmeshTM II Power MOSFET
Features
VDSS RDS(on)
Type ID
(@Tjmax) max
3 3
2
2
STD10NM50N 1 1
TO-220FP TO-220
STF10NM50N 550 V < 0.63 7A
STP10NM50N
100% avalanche tested
3
Low input capacitance and gate charge 1
Low gate input resistance DPAK
Application
Switching applications
Figure 1. Internal schematic diagram
Description
This series of devices is realized with the second
generation of MDmeshTM technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Table 1. Device summary
Order codes Marking Packages Packaging
STD10NM50N DPAK Tape and reel
STF10NM50N 10NM50N TO-220FP
Tube
STP10NM50N TO-220
September 2010 Doc ID 16929 Rev 2 1/16
www.st.com 16
Contents STD10NM50N, STF10NM50N, STP10NM50N
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 Test circuits .............................................. 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16 Doc ID 16929 Rev 2
STD10NM50N, STF10NM50N, STP10NM50N Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol Parameter Unit
TO-220, DPAK TO-220FP
VDS Drain-source voltage (VGS = 0) 500 V
VGS Gate- source voltage
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