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>> Download std10pf06 documenatation <<Text preview - extract from the document STD10PF06
P-CHANNEL 60V - 0.18 - 10A IPAK/DPAK
STripFETTM II POWER MOSFET
TYPE VDSS RDS(on) ID
STD10PF06 60 V < 0.20 10 A
s TYPICAL RDS(on) = 0.18
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED 3
s LOW GATE CHARGE 3
2 1
s APPLICATION ORIENTED 1
CHARACTERIZATION
s THROUGH-HOLE IPAK (TO-251) POWER IPAK DPAK
TO-251 TO-252
PACKAGE IN TUBE (SUFFIX "-1") (Suffix "-1") (Suffix "T4")
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
DESCRIPTION INTERNAL SCHEMATIC DIAGRAM
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature SizeTM" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 60 V
VDGR Drain-gate Voltage (RGS = 20 k) 60 V
VGS Gate- source Voltage
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