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>> Download std17n documenatation <<

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                                                                                           STD17N05L
                                                                                           STD17N06L
                              N - CHANNEL ENHANCEMENT MODE
                       LOW THRESHOLD POWER MOS TRANSISTOR

        TYPE              V DSS         R DS( on)        ID
STD17N05L                 50 V        < 0.085           17 A
STD17N06L                 60 V        < 0.085           17 A

s   TYPICAL RDS(on) = 0.065 
s   AVALANCHE RUGGED TECHNOLOGY
s   100% AVALANCHE TESTED                                                                    3
s   REPETITIVE AVALANCHE DATA AT 100oC                                                   2                     3
s   LOW GATE CHARGE                                                                  1                   1
s   LOGIC LEVEL COMPATIBLE INPUT
s   175oC OPERATING TEMPERATURE
s   APPLICATION ORIENTED                                                IPAK                          DPAK
    CHARACTERIZATION                                                   TO-251                         TO-252
s   THROUGH-HOLE IPAK (TO-251) POWER                                 (Suffix "-1")                (Suffix "T4")
    PACKAGE IN TUBE (SUFFIX "-1")
s   SURFACE-MOUNTING DPAK (TO-252)
    POWER PACKAGE IN TAPE & REEL
    (SUFFIX "T4")
                                                                   INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
  ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS

    Symbol                             Parameter                                 Value                         Unit
                                                                    STD17N05L                STD17N06L
     VD S      Drain-source Voltage (V GS = 0)                          50                       60               V
     V DG R    Drain- gate Voltage (R GS = 20 k)                        50                       60               V
     V GS      Gate-source Voltage                                                   

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