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                                                                                              STD1NB80-1
                                                   N - CHANNEL 800V - 16 - 1A - IPAK
                                                            PowerMESHTM MOSFET
                                                                                                       PRELIMINARY DATA

         TYPE             V DSS         R DS(on)       ID
STD1NB80-1               800 V          < 20           1A
s    TYPICAL RDS(on) = 16 
s    EXTREMELY HIGH dv/dt CAPABILITY
s    100% AVALANCHE TESTED
s    VERY LOW INTRINSIC CAPACITANCES
s    GATE CHARGE MINIMIZED
                                                                                                                    3
                                                                                                                2
DESCRIPTION                                                                                                 1
Using the latest high voltage MESH OVERLAYTM                                                   IPAK
process, STMicroelectronics has designed an                                                   TO-251
advanced family of power MOSFETs with                                                       (Suffix "-1")
outstanding performances. The new patent
pending strip layout coupled with the Company's
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
                                                                       INTERNAL SCHEMATIC DIAGRAM
and switching characteristics.

APPLICATIONS
s SWITCH MODE POWER SUPPLIES (SMPS)
s AC ADAPTORS AND BATTERY CHARGERS

  FOR HANDHELD EQUIPMENT




ABSOLUTE MAXIMUM RATINGS
    Symbol                                 Parameter                                          Value                      Unit
      V DS       Drain-source Voltage (V GS = 0)                                                800                        V
     V DGR       Drain- gate Voltage (R GS = 20 k)                                              800                        V
      V GS       Gate-source Voltage                                                           

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