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std1hnc60


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                                                                                                STD1HNC60
                                                 N-CHANNEL 600V - 4 - 2A - IPAK/DPAK
                                                              PowerMeshTMII MOSFET

        TYPE                VDSS         RDS(on)            ID

    STD1HNC60              600 V          <5            2A
s    TYPICAL RDS(on) = 4 
s    EXTREMELY HIGH dv/dt CAPABILITY
                                                                                                    3                   3
s    100% AVALANCHE TESTED                                                                      2
s    NEW HIGH VOLTAGE BENCHMARK                                                             1                      1
s    GATE CHARGE MINIMIZED
                                                                              IPAK                         DPAK
DESCRIPTION
                                                                             TO-251                        TO-252
The PowerMESHTMII is the evolution of the first
generation of MESH OVERLAYTM. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.                                                   INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR WELDING

  EQUIPMENT AND UNINTERRUPTIBLE
  POWER SUPPLIES AND MOTOR DRIVER




ABSOLUTE MAXIMUM RATINGS
     Symbol                                     Parameter                                    Value                      Unit
       VDS        Drain-source Voltage (VGS = 0)                                                600                         V
      VDGR        Drain-gate Voltage (RGS = 20 k)                                               600                         V
      VGS         Gate- source Voltage                                                          



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