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                                                                                              STD20NE03L
                               N - CHANNEL ENHANCEMENT MODE
                       " SINGLE FEATURE SIZETM " POWER MOSFET
        TYPE            V DSS         R DS(on )        ID
ST D20NE03L             30 V        < 0.020           20 A

s    TYPICAL RDS(on) = 0.016 
s    EXCEPTIONAL dv/dt CAPABILITY
s    100% AVALANCHE TESTED
s    LOW GATE CHARGE A 100 oC
s    APPLICATION ORIENTED                                                                              3
     CHARACTERIZATION                                                                              2                         3
                                                                                               1                        1
DESCRIPTION
This Power MOSFET is the latest development of
SGS-THOMSON unique "Single Feature SizeTM "                                    IPAK                            DPAK
strip-based process. The resulting transistor                                 TO-251                           TO-252
shows extremely high packing density for low on-                            (Suffix "-1")                    (Suffix "T4")
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.                                     INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
  SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS IN HIGH
  PERFORMANCE VRMs
s AUTOMOTIVE ENVIRONMENT (INJECTION,
  ABS, AIR-BAG, LAMPDRIVERS, Etc.)

ABSOLUTE MAXIMUM RATINGS
    Symbol                             Parameter                                            Value                           Unit
      V DS       Drain-source Voltage (VGS = 0)                                               30                             V
     V DGR       Drain- gate Voltage (RGS = 20 k)                                             30                             V
      V GS       Gate-source Voltage                                                         

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