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N-channel 100V - 0.033 - 25A - DPAK
Low gate charge STripFETTM II Power MOSFET
Features
Type VDSS RDS(on) ID
STD26NF10 100V < 0.038 25A
Exceptional dv/dt capability
3
Application oriented characterization 1
100% avalanche tested
Application oriented characterization DPAK
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is intended for Internal schematic diagram
any application with low gate charge drive
requirements.
Applications
Switching application
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