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STU27N3LH5
N-channel 30 V, 0.014 27 A, DPAK, IPAK, TO-220
,
STripFETTM V Power MOSFET
Features
Type VDSS RDS(on) max ID
0.019 3 3
STD27N3LH5 30 V 27 A 1
2
STP27N3LH5 30 V 0.020 27 A 1
IPAK DPAK
STU27N3LH5 30 V 0.020 27 A
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)
Very low switching gate charge
3
High avalanche ruggedness 2
1
TO-220
Low gate drive power losses
Application
Switching applications Figure 1. Internal schematic diagram
D (TAB or 2)
Description
This STripFETTMV Power MOSFET technology is
among the latest improvements, which have been
especially tailored to achieve very low on-state
resistance providing also one of the best-in-class
figure of merit (FOM). G (1)
S (3)
sc08440
Table 1. Device summary
Order codes Marking Package Packaging
STD27N3LH5 27N3LH5 DPAK Tape and reel
STU27N3LH5 27N3LH5 IPAK Tube
STP27N3LH5 27N3LH5 TO-220 Tube
May 2009 Doc ID 15617 Rev 2 1/17
www.st.com 17
Contents STD27N3LH5, STP27N3LH5, STU27N3LH5
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ........................... 6
3 Test circuits .............................................. 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17 Doc ID 15617 Rev 2
STD27N3LH5, STP27N3LH5, STU27N3LH5 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol Parameter Unit
DPAK, IPAK TO-220
VDS Drain-source voltage (VGS = 0) 30 V
VGS Gate-Source voltage
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